Cuong Q. Nguyen

Tunable type-II band alignment and electronic structure of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mrow> <mml:msub> <mml:mi mathvariant="normal">C</mml:mi> <mml:mn>3</mml:mn> </mml:msub> <mml:msub> <mml:mi mathvariant="normal">N</mml:mi> <mml:mn>4</mml:mn> </mml:msub> <mml:mo>/</mml:mo> <mml:msub> <mml:mi>MoSi</mml:mi> <mml:mn>2</mml:mn> </mml:msub> <mml:msub> <mml:mi mathvariant="normal">N</mml:mi> <mml:mn>4</mml:mn> </mml:msub> </mml:mrow> </mml:math>118 trích dẫn
Physical review. B./Physical review. B · 2022 · DOI

Two-Dimensional Metal/Semiconductor Contact in a Janus MoSH/MoSi 2 N 4 van der Waals Heterostructure71 trích dẫn
The Journal of Physical Chemistry Letters · 2022 · DOI

First principles study of the adsorption of alkali metal ions (Li, Na, and K) on Janus WSSe monolayer for rechargeable metal-ion batteries68 trích dẫn
Applied Surface Science · 2023 · DOI

Induced ferromagnetism in bilayer hexagonal Boron Nitride (h-BN) on vacancy defects at B and N sites35 trích dẫn
Physica E Low-dimensional Systems and Nanostructures · 2020 · DOI

First-principles study of the electronic structures and optical and photocatalytic performances of van der Waals heterostructures of SiS, P and SiC monolayers34 trích dẫn
RSC Advances · 2021 · DOI

Two-dimensional van der Waals graphene/transition metal nitride heterostructures as promising high-performance nanodevices34 trích dẫn
New Journal of Chemistry · 2021 · DOI

Negative Poisson's ratio and anisotropic carrier mobility in ternary Janus Si2XY (X/Y= S, Se, Te): First-principles prediction30 trích dẫn
Applied Physics Letters · 2023 · DOI

Computational insights into structural, electronic, and optical properties of Janus GeSO monolayer30 trích dẫn
RSC Advances · 2021 · DOI

First principles prediction of two-dimensional Janus XMoGeN ₂ (X = S, Se and Te) materials23 trích dẫn
Dalton Transactions · 2022 · DOI

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices22 trích dẫn
Langmuir · 2023 · DOI