Mai Phi Hung

Nhà nghiên cứu Hồ sơ 6/10

15 công bố · 367 trích dẫn · h-index 10

Thông tin

🏛️Nơi công tác: Trường Đại học Tôn Đức Thắng
🔬Lĩnh vực: Vật lý
🆔ORCID: 0000-0002-1063-8943
✍️Hồ sơ chưa đầy đủ — bổ sung thông tin

Chỉ số h-index 10 xếp học giả này vào lĩnh vực Vật lý, thuộc nhóm 25% dẫn đầu trong 1.880 hồ sơ cùng lĩnh vực của danh bạ này.

Công bố tiêu biểu

Quantitative Analysis of the Effect of Hydrogen Diffusion from Silicon Oxide Etch-Stopper Layer into Amorphous In–Ga–Zn–O on Thin-Film Transistor106 trích dẫn
IEEE Transactions on Electron Devices · 2014 · DOI

Negative Bias and Illumination Stress Induced Electron Trapping at Back-Channel Interface of InGaZnO Thin-Film Transistor53 trích dẫn
ECS Solid State Letters · 2014 · DOI

Highly stable fluorine-passivated In–Ga–Zn–O thin-film transistors under positive gate bias and temperature stress45 trích dẫn
Applied Physics Express · 2014 · DOI

Off-current reduction in p-type SnO thin film transistors45 trích dẫn
Applied Physics Letters · 2018 · DOI

Suppression of Degradation Induced by Negative Gate Bias and Illumination Stress in Amorphous InGaZnO Thin-Film Transistors by Applying Negative Drain Bias26 trích dẫn
ACS Applied Materials & Interfaces · 2014 · DOI

Correction to “Quantitative Analysis of the Effect of Hydrogen Diffusion From Silicon Oxide Etch-Stopper Layer Into Amorphous In–Ga–Zn–O on Thin-Film Transistor” [Nov 14 3762-3767]24 trích dẫn
IEEE Transactions on Electron Devices · 2014 · DOI

Quantitative Analysis of Hole-Trapping and Defect-Creation in InGaZnO Thin-Film Transistor under Negative-Bias and Illumination-Stress22 trích dẫn
ECS Journal of Solid State Science and Technology · 2014 · DOI

Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs14 trích dẫn
IEEE Transactions on Electron Devices · 2018 · DOI

Suppression of Negative Gate Bias and Illumination Stress Degradation by Fluorine-Passivated In-Ga-Zn-O Thin-Film Transistors12 trích dẫn
ECS Journal of Solid State Science and Technology · 2016 · DOI

Investigating Effect of Postannealing Time on Positive Bias Stress Stability of In–Ga–Zn–O TFT by Conductance Method10 trích dẫn
IEEE Transactions on Electron Devices · 2015 · DOI

Về lĩnh vực Vật lý

1.880học giả

36.984công bố

531.898trích dẫn

5.1h-index trung bình

Hướng nghiên cứu phổ biến trong lĩnh vực:

Graphene research and applicationsQuantum Dots Synthesis And Properties2D Materials and ApplicationsPhotonic and Optical DevicesOptical Network TechnologiesChalcogenide Semiconductor Thin Films

Nơi có nhiều học giả lĩnh vực này nhất: