Pham Nam Phong

Roughness-induced mechanisms for electron scattering in wurtzite group-III-nitride heterostructures21 trích dẫn
Physical Review B · 2005 · DOI

Hydrogenated Graphene and Hydrogenated Silicene: Computational Insights21 trích dẫn
ChemPhysChem · 2015 · DOI

Low-temperature mobility of holes in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Si</mml:mi><mml:mo>∕</mml:mo><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">Ge</mml:mi></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>p</mml:mi></mml:math>-channel heterostructures16 trích dẫn
Physical Review B · 2004 · DOI

Roughness-induced piezoelectric charges in wurtzite group-III-nitride heterostructures10 trích dẫn
Physical Review B · 2005 · DOI

Accelerating Dynamics of H on Graphene by Coadsorbates6 trích dẫn
The Journal of Physical Chemistry A · 2017 · DOI

Spin gapless semiconductors in antiferromagnetic monolayer HC 4 N 3 BN under strain4 trích dẫn
Computational Materials Science · 2021 · DOI

From half-metallic to magnetic semiconducting triazine g-C ₄ N ₃ : computational designs and insight4 trích dẫn
RSC Advances · 2021 · DOI

A semiclassical study of <i>cis</i>-<i>trans</i> isomerization in HONO using an interpolating moving least-squares potential3 trích dẫn
The Journal of Chemical Physics · 2013 · DOI

Atomic Transport at Charged Graphene: Why Hydrogen and Oxygen Are So Different
ChemistrySelect · 2017 · DOI

C4N3BN Half-Metallic Monolayer with Persistent Magnetism
Journal of Electronic Materials · 2024 · DOI