Xuan Thang Trinh

Negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>U</mml:mi></mml:math>System of Carbon Vacancy in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi></mml:math>-SiC268 trích dẫn
Physical Review Letters · 2012 · DOI

Conjugated Polyelectrolyte Blends for Electrochromic and Electrochemical Transistor Devices108 trích dẫn
Chemistry of Materials · 2015 · DOI

Investigation on origin of Z1/2 center in SiC by deep level transient spectroscopy and electron paramagnetic resonance70 trích dẫn
Applied Physics Letters · 2013 · DOI

Electronic properties of Si-doped AlxGa1−xN with aluminum mole fractions above 80%61 trích dẫn
Journal of Applied Physics · 2016 · DOI

Stable and metastable Si negative-U centers in AlGaN and AlN58 trích dẫn
Applied Physics Letters · 2014 · DOI

Quantitative comparison between Z1∕2 center and carbon vacancy in 4H-SiC53 trích dẫn
Journal of Applied Physics · 2014 · DOI

Negative-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>U</mml:mi></mml:math>carbon vacancy in 4<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>H</mml:mi></mml:math>-SiC: Assessment of charge correction schemes and identification of the negative carbon vacancy at the quasicubic site52 trích dẫn
Physical Review B · 2013 · DOI

The complex impact of silicon and oxygen on the n-type conductivity of high-Al-content AlGaN35 trích dẫn
Applied Physics Letters · 2013 · DOI

Deep levels related to the carbon antisite–vacancy pair in 4H-SiC21 trích dẫn
Journal of Applied Physics · 2021 · DOI

Theoretical and electron paramagnetic resonance studies of hyperfine interaction in nitrogen doped 4H and 6H SiC19 trích dẫn
Journal of Applied Physics · 2014 · DOI